NOT KNOWN FACTS ABOUT GERMANIUM

≤ 0.15) is epitaxially grown on the SOI substrate. A thinner layer of Si is grown on this SiGe layer, and then the structure is cycled by oxidizing and annealing levels. A result of the preferential oxidation of Si in excess of Ge [68], the initial Si1–abstract = "We assess the optical get of tensile-strained, n-type Ge content for Si-suitable